Method of forming a gate of a flash memory device

Details Method of forming a gate of a flash memory device Method of forming a gate of a flash memory device

2005-12-29

2009-08-11

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21680

Reexamination Certificate

active

07572696

ABSTRACT:
The present invention provides a method of forming a gate in a flash memory device. The method includes: forming a oxide layer on a semiconductor substrate; forming a stacked structure including a tunnel oxide layer, a floating gate, a dielectric layer, and a control gate by patterning them on the semiconductor substrate; exposing portions of the semiconductor substrate below the field oxide layer by selectively etching the field oxide layer adjacent to the source region in order to form a common source; performing subsequent etching for removing oxides between the control gates; and forming an oxide layer covering the semiconductor substrate and both sidewalls of the floating gate and control gate.

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