Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-08-07
2007-08-07
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S216000, C438S157000, C438S779000, C257SE29089, C257SE29132, C257SE21207, C257SE21625, C257SE21639
Reexamination Certificate
active
11005193
ABSTRACT:
A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2environment at a temperature between about 500° C. and 800° C.
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Lin Jing-Yi
Peng Lung-Han
Wu Han-Ming
Baker & McKenzie LLP
Fourson George
Maldonado Julio J.
Roche David I.
Tekcore Co., Ltd.
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