Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2011-07-12
2011-07-12
Maldonado, Julio J (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S771000, C438S782000, C257SE21082, C257SE21282, C257SE21287
Reexamination Certificate
active
07977254
ABSTRACT:
A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.
REFERENCES:
patent: 6190508 (2001-02-01), Peng et al.
Lin Jing-Yi
Peng Lung-Han
Wu Han-Ming
Baker & McKenzie LLP
Maldonado Julio J
Roche David I.
Tekcore Co., Ltd.
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