Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-04-19
2005-04-19
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S595000, C438S655000, C438S656000, C438S660000, C438S663000, C438S682000
Reexamination Certificate
active
06881637
ABSTRACT:
In a method for forming a gate electrode having an excellent sidewall profile, after a gate structure is formed on a substrate, a first oxide film is formed on a sidewall of the gate structure and on the substrate by re-oxidizing the gate structure and the substrate under an atmosphere including an oxygen gas and an inert gas. The gate structure has a gate oxide film pattern, a polysilicon film pattern and a metal silicide film pattern. A portion of the first oxide film formed on a sidewall of the polysilicon film pattern has a thickness substantially identical to that of a portion of the first oxide film formed on a sidewall of the metal silicide film pattern. A failure of a semiconductor device having the gate electrode can be minimized because the gate electrode has an improved sidewall profile.
REFERENCES:
patent: 8032066 (1996-02-01), None
patent: 11345970 (1999-12-01), None
patent: 000061321 (2000-10-01), None
English language of Abstract for Japanese Patent Publication No. JP8032066, filed Feb. 2, 1996.
English language of Abstract for Japanese Patent Publication No. JP11345970, filed Dec. 14, 1999.
English Language Abstract of Korean Publication No: 000061321 A.
Han Jae-Jong
Hyung Yong-Woo
Lee Kong-Soo
Shin Seung-Mok
Yun Eun-Jung
Lee Hsien-Ming
Marger & Johnson & McCollom, P.C.
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