Method of forming a gate dielectric by in-situ plasma

Details Method of forming a gate dielectric by in-situ plasma Method of forming a gate dielectric by in-situ plasma

2011-07-19

2011-07-19

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S585000, C438S287000, C438S775000, C438S197000

Reexamination Certificate

active

07981808

ABSTRACT:
A method of forming a gate dielectric layer includes forming a first dielectric layer over a semiconductor substrate using a first plasma, performing a first in-situ plasma nitridation of the first dielectric layer to form a first nitrided dielectric layer, forming a second dielectric layer over the first dielectric layer using a second plasma, performing a second in-situ plasma nitridation of the second dielectric layer to form a second nitrided dielectric layer; and annealing the first nitrided dielectric layer and the second nitrided dielectric layer, wherein the gate dielectric layer comprises the first nitrided dielectric layer and the second nitrided dielectric layer. In other embodiments, the steps of forming a dielectric layer using a plasma and performing an in-situ plasma nitridation are repeated so that more than two nitrided dielectric layers are formed and used as the gate dielectric layer.

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