Method of forming a gate dielectric

Details Method of forming a gate dielectric Method of forming a gate dielectric

2008-02-28

2010-06-22

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S762000, C438S763000, C257SE21409

Reexamination Certificate

active

07741183

ABSTRACT:
A method of forming a semiconductor device includes providing a substrate for the semiconductor device. A base oxide layer is formed overlying the substrate by applying a rapid thermal oxidation (RTO) of the substrate in the presence of oxygen. A nitrogen-rich region is formed within and at a surface of the base oxide layer. The nitrogen-rich region overlies an oxide region in the base oxide layer. Afterwards, the semiconductor device is annealed in a dilute oxygen and hydrogen-free ambient of below 1 Torr partial pressure of the oxygen. The annealing heals bond damage in both the oxide region and the nitrogen-rich region in the base oxide layer. After annealing the semiconductor device in the dilute oxygen ambient, in-situ steam generation (ISSG) is used to grow and density the oxide region in the base oxide layer at an interface between the substrate and base oxide layer.

REFERENCES:
patent: 6114258 (2000-09-01), Miner et al.
patent: 6184155 (2001-02-01), Yu et al.
patent: 7001852 (2006-02-01), Luo et al.
patent: 7265065 (2007-09-01), Wang et al.
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 2002/0079523 (2002-06-01), Zheng et al.
patent: 2002/0197784 (2002-12-01), Luoh et al.
patent: 2004/0018688 (2004-01-01), Burnham et al.
patent: 2007/0207628 (2007-09-01), Chua
patent: 2003309260 (2003-10-01), None
Luo et al; “Effect H2 Content on Reliability of Ultrathin In-Situ Steam generated (ISSG) SiO2”; IEEE Electron Device Letters, vol. 21, No. 9, Sep. 2000.

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