Method of forming a fluorinated silicon oxide layer using plasma

Details Method of forming a fluorinated silicon oxide layer using plasma Method of forming a fluorinated silicon oxide layer using plasma

1995-02-10

1996-11-05

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

20419237, 427 99, 4271261, 427578, 427579, 437228, 437238, H05N 102

Patent

active

055715761

ABSTRACT:
A method of forming a fluorinated silicon oxide dielectric layer by plasma chemical vapor deposition. The method includes the steps of creating a plasma in a plasma chamber and introducing a silicon-containing gas, a fluorine-containing gas, oxygen and an inert gas such that the gases are excited by the plasma and react proximate a substrate to form a fluorinated silicon oxide layer on the surface of the substrate. The fluorinated layer formed has a dielectric constant which is less than that of a silicon oxide layer.

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