Method of forming a floating gate in a flash memory device

Details Method of forming a floating gate in a flash memory device Method of forming a floating gate in a flash memory device

1997-04-16

1999-02-16

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438257, 438595, H01L 21336

Patent

active

058720359

ABSTRACT:
The present invention provides a method to maintain a desired width of a floating gate of a flash memory device, so that the loss of the capability of storing charges is reduced. The method for forming a floating gate in a flash memory device containing a dielectric layer between said floating gate and a control gate, comprising the steps: forming field oxide layers in a semiconductor substrate; forming a gate oxide layer and a conductivity layer for said floating gate on said semiconductor substrate; forming a first oxide layer and a silicon nitride layer, in order, on said conductivity layer; forming a photoresist pattern; selectively etching said silicon nitride layer, said first oxide layer and said conductivity layer; forming source/drain regions by an ion implantation process; removing said photoresist pattern; forming a passivation layer on the resulting structure and forming a spacer layer on a sidewall of said floating gate by applying an isotropic etching process to said passivation layer so as to prevent said sidewall of said floating gate from being oxidized; forming a second oxide layer on said silicon nitride layer; and forming a control gate on the resulting structure.

REFERENCES:
patent: 4722908 (1988-02-01), Burton
patent: 4997790 (1991-03-01), Woo et al.
patent: 5026663 (1991-06-01), Zdebel et al.
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5225362 (1993-07-01), Bergemont
patent: 5266509 (1993-11-01), CheN
patent: 5298443 (1994-03-01), Jang
patent: 5453391 (1995-09-01), Yiu et al.

Affiliated with

Also associated with

Rating

Method of forming a floating gate in a flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a floating gate in a flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a floating gate in a flash memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2061928