Method of forming a FINFET structure

Details Method of forming a FINFET structure Method of forming a FINFET structure

2008-01-29

2008-01-29

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S173000, C257SE21014, C257SE21538

Reexamination Certificate

active

11190411

ABSTRACT:
A semiconductor device (10) such as a FinFET transistor of small dimensions is formed in a process that permits substantially uniform ion implanting (32) of a source (14) electrode and a drain (16) electrode adjacent to an intervening gate (18) and channel (23) connected via source/drain extensions (22, 24) which form a fin. At small dimensions, ion implanting may cause irreparable crystal damage to any thin areas of silicon such as the fin area. To permit a high concentration/low resistance source/drain extension, a sacrificial doping layer (28, 30) is formed on the sides of the fin area. Dopants from the sacrificial doping layer are diffused into the source electrode and the drain electrode using heat. Subsequently a substantial portion, or all, of the sacrificial doping layer is removed from the fin.

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