Method of forming a fine resist pattern using an alkaline film c

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430156, 430166, 4302731, 430327, 430330, 430510, 430950, G03K 500

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055544894

ABSTRACT:
A forming method of a fine resist pattern improve so as to form a fine pattern of high accuracy can be obtained. A positive-type photoresist 1 including naphthoquinone diazide and novolak resin is applied on a substrate. An anti-reflection film adjusted to alkalinity is applied on positive-type photoresist 1. Positive-type photoresist 1 on which anti-reflection film 9 is applied is selectively irradiated. Positive-type photoresist 1 is developed.

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patent: 4950577 (1990-08-01), Grieve et al.
"High-Aspect-Ratio Alkaline Surface Treatment Method of Dyed Photoresist" Endo et al. Jap. Journal of App. Phys. vol. 28, No. 3, Mar. 1989 pp. 549-552 Dupont Info. Bulletin-Teflon pp. 1-2.
"Introduction to Microlithography" Thompson et al. A.C.S. Symposium Series Mar. 20-25, 1983 ACS Wash. D.C. 1983 pp. 111-116.
"A New Photolithography Technique with Anitreflective Coating on Resist: ARCOR", by T. Tanaka et al, J. Electrochem. Soc., vo. 137, No. 12, Dec. 1990, pp. 3900-3905.
"LENOS: Latitude Enhancement Novel Single Layer Lithography", by Sachiko Ogawa, et al, Journal of Photopolymer Science and Technology, vol. 2, No. 3, 1989, pp. 375-382.

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