Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1994-04-13
1997-04-29
Fourson, George
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438934, 438682, 438659, 438558, H01L 2128
Patent
active
056248695
ABSTRACT:
A method and a device directed to the same, for stabilizing cobalt di-silicide/single crystal silicon, amorphous silicon, polycrystalline silicon, germanide/crystalline germanium, polycrystalline germanium structures or other semiconductor material structures so that high temperature processing steps (above 750.degree. C.) do not degrade the structural quality of the cobalt di-silicide/silicon structure. The steps of the method include forming a di-silicide or germanide by either reacting cobalt with the substrate material and/or the codeposition of the di-silicide or germanide on a substrate, adding a selective element, either platinum or nitrogen, into the cobalt and forming the di-silicide or germanide by a standard annealing treatment. Alternatively, the cobalt di-silicide or cobalt germanide can be formed after the formation of the di-silicide or germanide respectively. As a result, the upper limit of the annealing temperature at which the di-silicide or germanide will structurally degrade is increased.
REFERENCES:
patent: 4322453 (1982-03-01), Miller
patent: 4663191 (1987-05-01), Choi et al.
patent: 4707197 (1987-11-01), Hensel et al.
patent: 4946803 (1990-08-01), Ellwanger
patent: 5041391 (1991-08-01), Ono
patent: 5075251 (1991-12-01), Torres et al.
patent: 5302552 (1994-04-01), Duchateau et al.
patent: 5449631 (1995-09-01), Giewont et al.
A. Nishiyama, Y. Alasaka, Y. Ushiku, K. Hishioka, Y. Suizu and M. Shiozaki, A Thermally Stable Salicide Process Using N.sub.2 Implantation in TiSi.sub.2, "IEEE 1990", (Jun. 12-13, 1990 VMIC Conference), pp. 310-316.
R. V. Joshi, High Conductivity Multiphase Metal-Silicide Alloy, "IBM Technical Disclosure Bulletin", vol. 30, No. 7, (Dec. 1987), pp. 215-217.
K. W. Choi and S. Roberts, Improved Salicide Process With Multilayer Silicide Formation, "IBM Technical Disclosure Bulletin", vol. 27, No. 7B, (Dec. 1984), pp. 4402-4404.
Bin-Shing Chen et al., "Formation of cobalt-silicided p+n junctions using implant through silicide technology", Journal of Applied Physics, Nov. 15, 1992, vol. 72, No. 10, pp. 4619-4626, USA.
K.T. Ho et al., "Application of Nitrogen in a Cobalt-Silicide-Forming System", Thin Solid Films, May 24, 1985, vol. 127, No. 3-4, pp. 313-322, Switzerland.
1991 European Workshop on Refractory Metals and Silicides, Saltsjobaden, Sweden, Mar. 24-27, 1991, S. Nygren et al., "Morphological Instabilities of Nickel and Cobalt Silicides on Silicon", Applied Surface Science, 1991, vol. 53, pp. 87-91, Netherlands.
Jiang et al, "Ultra Shallow Junction Formation Using Diffusion from Silicides", J. Electrochem. Soc. vol. 139, No. 1, Jan. 1992, pp. 196-205.
Ho et al., "Application of Nitrogen in a Cobalt-Silicide-Forming System", Thin Solid Films, vol. 127, 1985, pp. 313-322.
Agnello Paul D.
Cabral, Jr. Cyril
Clevenger Lawrence A.
Copel Matthew W.
D'Heurle Francois M.
Bilodeau Thomas G.
Fourson George
International Business Machines - Corporation
LandOfFree
Method of forming a film for a multilayer Semiconductor device f does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a film for a multilayer Semiconductor device f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a film for a multilayer Semiconductor device f will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-705389