Method of forming a film by using plasmanized process gas contai

Details Method of forming a film by using plasmanized process gas contai Method of forming a film by using plasmanized process gas contai

1997-07-21

2000-10-17

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438781, 438788, 438789, 438790, H01L 2131, H01L 21469

Patent

active

061331627

ABSTRACT:
There is provided a film forming pre-treatment method used when silicon containing insulating film, etc. are to be formed by virtue of thermal CVD method on a substrate 101 on which interconnection layers, etc. are formed. Before an insulating film is deposited on the substrate 101, gaseous H.sub.2 O is plasmanized and then a surface of the substrate 101 is exposed to such plasmanized H.sub.2 O.

REFERENCES:
patent: 5314724 (1994-05-01), Tsunkune et al.
patent: 5525550 (1996-06-01), Kato
patent: 5543017 (1996-08-01), Uchiyama et al.
patent: 5569497 (1996-10-01), Verzaro et al.
patent: 5616369 (1997-04-01), Williams et al.
patent: 5633424 (1997-05-01), Graves et al.
patent: 5654054 (1997-08-01), Tropsha et al.
patent: 5707895 (1998-01-01), Wuu et al.
patent: 5763018 (1998-06-01), Sato
Bright et al, "Low-Rate Plasma Oxidation of Si in a Dilute Oxygen/Helium Plasma for Low-Temperature Gate Quality Si/SiO2 Interfaces" Applied Physics Letters, Vo. 58, No. 6. Feb. 11, 1991, pp. 619-621.

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