Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-26
2006-12-26
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S269000, C438S296000, C438S311000, C438S359000, C438S360000, C438S424000, C438S586000, C438S595000, C438S652000, C438S651000, C438S682000, C438S692000, C438S700000, C438S733000, C438S734000, C438S760000, C438S779000
Reexamination Certificate
active
07153731
ABSTRACT:
A method of forming a field effect transistor includes forming a channel region within bulk semiconductive material of a semiconductor substrate. Source/drain regions are formed on opposing sides of the channel region. An insulative dielectric region is formed within the bulk semiconductive material proximately beneath at least one of the source/drain regions. A method of forming a field effect transistor includes providing a semiconductor-on-insulator substrate, said substrate comprising a layer of semiconductive material formed over a layer of insulative material. All of a portion of the semiconductive material layer and all of the insulative material layer directly beneath the portion are removed thereby creating a void in the semiconductive material layer and the insulative material layer. Semiconductive channel material is formed within the void. Opposing source/drain regions are provided laterally proximate the channel material. A gate is formed over the channel material. Integrated circuitry includes a bulk semiconductor substrate. A field effect transistor thereon includes a gate, a channel region in the bulk semiconductor substrate, and source/drain regions within the substrate on opposing sides of the channel region. A field isolation region is formed in the bulk semiconductor substrate and laterally adjoins with one of the source/drain regions. The field isolation region includes a portion which extends beneath at least some of the one source/drain region. Other aspects are contemplated.
REFERENCES:
patent: 4849371 (1989-07-01), Hansen et al.
patent: 5674760 (1997-10-01), Hong
patent: 5736435 (1998-04-01), Venkatesan et al.
patent: 5760442 (1998-06-01), Shigyo et al.
patent: 5908313 (1999-06-01), Chau et al.
patent: 5972758 (1999-10-01), Liang
patent: 6027975 (2000-02-01), Hergenrother et al.
patent: 6054355 (2000-04-01), Inumiya et al.
patent: 6156589 (2000-12-01), Noble
patent: 6174754 (2001-01-01), Lee et al.
patent: 6180486 (2001-01-01), Leobandung et al.
patent: 6180494 (2001-01-01), Manning
patent: 6204138 (2001-03-01), Krishnan et al.
patent: 6229187 (2001-05-01), Ju
patent: 6245636 (2001-06-01), Maszara
patent: 6261878 (2001-07-01), Doyle et al.
patent: 6274913 (2001-08-01), Brigham et al.
patent: 6300199 (2001-10-01), Reinberg
patent: 6300219 (2001-10-01), Doan et al.
patent: 6358798 (2002-03-01), Chen
patent: 6372583 (2002-04-01), Tyagi
patent: 6376286 (2002-04-01), Ju
patent: 6388294 (2002-05-01), Radens et al.
patent: 6391726 (2002-05-01), Manning
patent: 6404014 (2002-06-01), Leobandung et al.
patent: 6420767 (2002-07-01), Krishnan et al.
patent: 6424011 (2002-07-01), Assaderaghi et al.
patent: 6465852 (2002-10-01), Ju
patent: 6555891 (2003-04-01), Furukawa et al.
patent: 6716687 (2004-04-01), Wang et al.
patent: 2003/0015766 (2003-01-01), Abbott et al.
patent: 2003/0025157 (2003-02-01), Ho et al.
patent: 2003/0104658 (2003-06-01), Furukawa et al.
Wolf et al.Silicon Epitaxial Film Growth, 1 Slicon Processing for the VLSI Era—Process Technology, pp. 124-160 (Lattice Press 1986).
U.S. patent applicaton Ser. No. 10/073,723, Wang et al., filed Feb. 11, 2002.
U.S. patent application Ser. No. 10/222,325, Tang et al., filed Aug. 15, 2002.
Abbott Todd R.
Cho Chih-Chen
Trivedi Jigish D.
Wang Zhongze
Issac Stanetta
Lebentritt Michael
Wells St. John P.S.
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