Method of forming a field effect transistor including...

Details Method of forming a field effect transistor including... Method of forming a field effect transistor including...

2008-04-15

2008-04-15

Pizarro, Marcos (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S592000, C438S595000, C257SE21404

Reexamination Certificate

active

11490712

ABSTRACT:
The invention includes methods of forming field effect transistors. In one implementation, a method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material includes forming transistor gate semiconductive material into a gate line over a semiconductive material channel region. The gate line includes semiconductive material sidewalls. The semiconductive material sidewalls of the gate line are oxidized. After the oxidizing, at least one of a conductive metal or metal compound is formed in electrical connection with the transistor gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed.

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Microchip Fabrication: A Practical Guide to Semiconductor Processing; Van Zant, Peter; 4thed., 2000, pp. 303-305 and 401-402.

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