Method of forming a field effect transistor

Details Method of forming a field effect transistor Method of forming a field effect transistor

1997-11-05

1999-08-03

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, H01L 21339

Patent

active

059337389

ABSTRACT:
A semiconductor processing method of forming a field effect transistor includes, a) providing a first layer of material over a substrate; b) providing a first opening through the first layer, the first opening having a width and a base; c) providing a second layer of material over the first layer and to within the first opening to a thickness which is less than one half the first opening width to less than completely fill the first opening and define a narrower second opening; d) anisotropically etching the second layer of material from outwardly of the first layer and from the first opening base to effectively provide inner sidewall spacers within the first opening; e) providing a gate dielectric layer within the second opening; f) providing a layer of electrically conductive gate material over the first layer and to within the second opening over the gate dielectric layer to fill the second opening with conductive gate material; g) without masking, planarize etching the conductive gate material layer substantially selective relative to the first layer to define a transistor gate within the second opening; and h) providing opposing source and drain regions relative to the transistor gate.

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