Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2004-11-24
2010-06-29
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S156000, C438S212000, C438S268000, C438S269000, C438S272000, C257S328000, C257S329000, C257S330000, C257S331000, C257S334000
Reexamination Certificate
active
07745289
ABSTRACT:
In accordance with an exemplary embodiment of the invention, a substrate of a first conductivity type silicon is provided. A substrate cap region of the first conductivity type silicon is formed such that a junction is formed between the substrate cap region and the substrate. A body region of a second conductivity type silicon is formed such that a junction is formed between the body region and the substrate cap region. A trench extending through at least the body region is then formed. A source region of the first conductivity type is then formed in an upper portion of the body region. An out-diffusion region of the first conductivity type is formed in a lower portion of the body region as a result of one or more temperature cycles such that a spacing between the source region and the out-diffusion region defines a channel length of the field effect transistor.
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Bencuya Izak
Challa Ashok
Mo Brian Sze-Ki
Fairchild Semiconductor Corporation
Garcia Joannie A
Richards N Drew
Townsend and Townsend / and Crew LLP
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