Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-30
2008-10-07
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S633000, C438S638000, C257SE21579, C716S030000
Reexamination Certificate
active
07432191
ABSTRACT:
A method of patterning a structure in a thin film on a substrate is described. A film stack on the substrate includes the thin film on the substrate, a developable anti-reflective coating (ARC) layer on the thin film, and a first photo-resist layer on the developable ARC layer. The first photo-resist layer and the developable ARC layer are imaged with a first image pattern and developed to form the first image pattern in the first photo-resist layer and the developable ARC layer. Thereafter, the first photo-resist layer is removed, and the developable ARC layer is modified by thermal treatment. A second photo-resist layer is then formed on the modified ARC layer, and the second photo-resist layer is imaged with a second image pattern and developed to form the second image pattern in the second photo-resist layer. The first and second image patterns are then transferred to the thin film.
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Dunn Shannon W.
Hyland Sandra
Stamper Harlan D.
Fourson George
Tokyo Electron Limited
Wood Herron & Evans LLP
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