Method of forming a doped region in a semiconductor substrate

Details Method of forming a doped region in a semiconductor substrate Method of forming a doped region in a semiconductor substrate

1996-10-29

2000-01-11

Mulpuri, Savitri

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

438514, H01L 21265

Patent

active

060135662

ABSTRACT:
A method for implanting shallow regions in a semiconductor substrate comprises heating the backside of the substrate with a lamp or other heating method, and implanting the frontside of the substrate using plasma doping. In a further embodiment, the frontside of the substrate is also heated, using rapid thermal processing during implantation. Implantation damage is simultaneously annealed during implantation, so that a subsequent anneal, if needed at all, is done using rapid thermal annealing.

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