Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-26
2009-11-17
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S525000, C438S531000, C438S551000, C257SE21149, C257SE21147
Reexamination Certificate
active
07618867
ABSTRACT:
A method of forming a doped portion of a semiconductor substrate includes: defining a plurality of protruding portions on the substrate surface, the protruding portions having a minimum height; providing a pattern layer above the substrate surface; removing portions of the pattern layer from predetermined substrate portions; performing an ion implantation procedure such that an angle of the ions with respect to the substrate surface is less than 90°, wherein the ions are stopped by the pattern layer and by the protruding portions, the predetermined substrate portions thereby being doped with the ions; and removing the pattern layer.
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Henke Dietmar
Jakubowski Frank
Mono Tobias
Morhard Klaus-Dieter
Sachse Hermann
Edell, Shaprio & Finnan LLC
Ghyka Alexander G
Infineon - Technologies AG
Nikmanesh Seahvosh J
LandOfFree
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