Method of forming a dielectric layer structure

Details Method of forming a dielectric layer structure Method of forming a dielectric layer structure

1996-03-21

1997-09-09

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

438779, H01L 2102

Patent

active

056656580

ABSTRACT:
A method of forming a stable semiconductor device on an at least partially completed semiconductor device including a supporting semiconductor structure of III-V material having a clean and atomically ordered surface to be coated with a dielectric layer structure. A relatively thin layer of Ga.sub.2 O.sub.3 is deposited on the surface by evaporation using a high purity single crystal of material including Ga.sub.2 O.sub.3 and a second oxide, such as MgO or Gd.sub.2 O.sub.3. A second layer of material with low bulk trap density relative to the Ga.sub.2 O.sub.3 is deposited on the layer of Ga.sub.2 O.sub.3 to complete the dielectric layer structure.

REFERENCES:
patent: 4297176 (1981-10-01), Hannah et al.
patent: 5451548 (1995-09-01), Hunt et al.
patent: 5550089 (1996-08-01), Dutta et al.

Affiliated with

Also associated with

Rating

Method of forming a dielectric layer structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a dielectric layer structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a dielectric layer structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-69626