Method of forming a dielectric film

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

Reexamination Certificate

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C427S255340, C427S255360, C427S255700, C438S761000

Reexamination Certificate

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06866890

ABSTRACT:
A method of forming a dielectric film on a Si substrate comprises the steps of adsorbing a gaseous molecular compound of a metal element constituting a dielectric material on a Si substrate, and causing a decomposition of the gaseous molecular compound thus adsorbed by a hydrolysis process or pyrolytic decomposition process or an oxidation process.

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