Method of forming a crown shape capacitor

Details Method of forming a crown shape capacitor Method of forming a crown shape capacitor

1998-01-06

1998-12-22

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, H01L 218242

Patent

active

058518770

ABSTRACT:
An etching process is used to etch the polysilicon layer. Then, Polymers are formed on the polysilicon layer after an ash step is performed. An organic layer is formed on the surface of the polysilicon layer, and on the polymers. An anisotropically etch is carried out to etch the organic layer, thereby forming organic side wall spacers on the side walls of the polysilicon layer. The etching is continuously performed to etch the polysilicon layer using the polymers and organic side wall spacers as masks. Next, an ash and a RCA clean procedure are performed to remove the residual polymers and the organic layer. A dielectric layer is then deposited on the surface of the polysilicon. A conductive layer is deposited over the dielectric layer.

REFERENCES:
patent: 5399518 (1995-03-01), Sim et al.
patent: 5444005 (1995-08-01), Kim et al.

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