Method of forming a crown capacitor for a DRAM cell

Details Method of forming a crown capacitor for a DRAM cell Method of forming a crown capacitor for a DRAM cell

1999-06-07

2000-10-31

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438397, H01L 218242

Patent

active

06140179&

ABSTRACT:
The present invention discloses a method of forming a crown capacitor for a DRAM cell. An etching method having different selectivity between the BPSG and silicon oxynitride layer is applied to form a sacrificial structure with a concanovenex sidewall. Using the sacrificial structure as a mold, a high capacitance crown capacitor is obtained.

REFERENCES:
patent: 5827783 (1998-10-01), Hsai et al.
patent: 5926719 (1998-10-01), Sung

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