Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate
2006-01-03
2006-01-03
Nguyen, Ha (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate
active
06982214
ABSTRACT:
Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020atoms/cm3.
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Chen Aihua
Fu Li
Luo Lee
Panayil Sheeba J.
Quentin Christopher G.
Blakely & Sokoloff, Taylor & Zafman
Geyer Scott
Nguyen Ha
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