Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-12
2005-04-12
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S295000, C438S253000
Reexamination Certificate
active
06878982
ABSTRACT:
A contact structure for a ferroelectric memory device integrated in a semiconductor substrate and includes an appropriate control circuitry and a matrix array of ferroelectric memory cells, wherein each cell includes a MOS device connected to a ferroelectric capacitor. The MOS device has first and second conduction terminals and is covered with an insulating layer. The ferroelectric capacitor has a lower plate formed on the insulating layer above the first conduction terminals and connected electrically to the first conduction terminals, which lower plate is covered with a layer of a ferroelectric material and coupled capacitively to an upper plate. Advantageously, the contact structure comprises a plurality of plugs filled with a non-conductive material between the first conduction terminals and the ferroelectric capacitor, and comprises a plurality of plugs filled with a conductive material and coupled to the second conduction terminals or the control circuitry.
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Ho Tu-Tu
Iannucci Robert
Jorgenson Lisa K.
Nelms David
Seed IP Law Group PLLC
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