Method of forming a contact in a flash memory device

Details Method of forming a contact in a flash memory device Method of forming a contact in a flash memory device

2008-01-22

2008-01-22

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21575, C257SE21597, C257SE21577, C257SE21627, C257SE21641

Reexamination Certificate

active

11157143

ABSTRACT:
A method of forming a contact between a bitline and a local interconnect in a flash memory device comprises forming a hard mask layer on a planarized surface that includes an exposed top section of the local interconnects prior to depositing an oxide dielectric layer. The hard mask layer may be composed of a material that has an etch resistance as compared to the interlayer dielectric material, e.g., nitride. Openings in the hard mask define positions for the contacts to the local interconnects exposed in the top section.

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