Method of forming a configuration of interconnections on a semic

Details Method of forming a configuration of interconnections on a semic Method of forming a configuration of interconnections on a semic

1989-04-14

1990-06-26

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156653, 156656, 156657, 1566591, 156662, 357 71, 437192, 437203, 437246, H01L 21306, B44C 122, C23F 102, C03C 1500

Patent

active

049369504

ABSTRACT:
A method of the kind consisting in that a contact is obtained with an active zone (11) carried by a semiconductor substrate (10) by means of conductive contact studs (18a) located in the contact openings (16c) of an isolating layer (12) and in that then a metallic configuration of interconnections (22) is formed establishing the conductive connection with the conductive contact studs (18a). A separation layer (13) is provided between the isolating layer (12) and the conductive layer (18), which can be eliminated selectively with respect to the isolating layer (12). Thus, the isolating layer (12) retains its original flatness and the conductive contact studs (18a) have an upper level (20) exceeding slightly the level (21) of the isolating layer (12), thus favoring the contact between these contact studs (18a) and the metallic configuration of interconnections (22). Application in microcircuits having a high integration density.

REFERENCES:
patent: 4184909 (1980-01-01), Chang et al.
patent: 4361599 (1982-11-01), Wourms
patent: 4484978 (1984-11-01), Keyser
patent: 4536249 (1985-08-01), Rhodes
patent: 4624864 (1986-11-01), Hartmann
patent: 4640738 (1987-02-01), Fredericks et al.

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