Method of forming a conductive structure in a semiconductor...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257SE21295, C257SE21409

Reexamination Certificate

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07846836

ABSTRACT:
A method of forming a conductive structure in a semiconductor device includes forming a conductive layer on a substrate, forming a conductive layer pattern on the substrate by patterning the conductive layer, forming an oxide layer on the substrate and a portion of the conductive layer, and forming a capping layer on the oxide layer and the conductive layer pattern.

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patent: 6075274 (2000-06-01), Wu et al.
patent: 7078748 (2006-07-01), Goldbach et al.
patent: 7465617 (2008-12-01), Ku et al.
patent: 2004/0266154 (2004-12-01), Lim et al.
patent: 2005/0275046 (2005-12-01), Goldbach et al.
patent: 2007/0148876 (2007-06-01), Yu
patent: 2006-093182 (2006-04-01), None
patent: 10-2004-0103571 (2004-12-01), None
patent: 10-2005-0000894 (2005-01-01), None

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