Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2006-01-10
2006-01-10
VerSteeg, Steven (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192150, C204S192120, C438S685000, C438S785000
Reexamination Certificate
active
06984294
ABSTRACT:
A conductive barrier layer may be formed within high aspect ratio openings by a two-step ionizing sputter deposition. The first step is performed at low pressure and low bias power to obtain good coverage of upper portions of the openings. In the second step, the bias power and the pressure are raised to improved directionality of the particles while at the same time increasing the scatter events so that an increased deposition rate at critical structure areas is obtained, thereby achieving a good coverage at lower sidewall areas.
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Friedemann Michael
Kahlert Volker
Advanced Micro Devices , Inc.
VerSteeg Steven
Williams Morgan & Amerson P.C.
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