Method of forming a channel termination region using a...

Details Method of forming a channel termination region using a... Method of forming a channel termination region using a...

2008-08-12

2010-11-09

Fahmy, Wael M (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S555000, C438S556000, C257S398000, C257S519000, C257S648000, C257SE29016

Reexamination Certificate

active

07829420

ABSTRACT:
A semiconductor device has a channel termination region for using a trench30filled with field oxide32and a channel stopper ring18which extends from the first major surface8through p-well6along the outer edge36of the trench30,under the trench and extends passed the inner edge34of the trench. This asymmetric channel stopper ring provides an effective termination to the channel10which can extend as far as the trench30.

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