Method of forming a carbon polymer film using plasma CVD

Details Method of forming a carbon polymer film using plasma CVD Method of forming a carbon polymer film using plasma CVD

2007-09-11

2009-12-29

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S758000, C257SE21035, C257SE21270

Reexamination Certificate

active

07638441

ABSTRACT:
A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas. The liquid monomer is unsaturated and has no benzene structure.

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