Method of forming a carbon polymer film using plasma CVD

Details Method of forming a carbon polymer film using plasma CVD Method of forming a carbon polymer film using plasma CVD

2006-09-20

2008-12-30

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S680000, C438S758000, C257SE21035, C257SE21270

Reexamination Certificate

active

07470633

ABSTRACT:
A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.

REFERENCES:
patent: 4913994 (1990-04-01), Osawa et al.
patent: 5470661 (1995-11-01), Bailey et al.
patent: 5846859 (1998-12-01), Lee
patent: 5869135 (1999-02-01), Vaeth et al.
patent: 6428894 (2002-08-01), Babich et al.
patent: 2006/0084280 (2006-04-01), Matsuki et al.
patent: 2007/0248767 (2007-10-01), Okura et al.
patent: 2006-52398 (2006-02-01), None

Affiliated with

Also associated with

Rating

Method of forming a carbon polymer film using plasma CVD does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a carbon polymer film using plasma CVD, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a carbon polymer film using plasma CVD will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4028127