Method of forming a capacitor including a bottom silicon diffusi

Details Method of forming a capacitor including a bottom silicon diffusi Method of forming a capacitor including a bottom silicon diffusi

1997-08-07

2000-07-18

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, 438653, H01L 218242

Patent

active

060906588

ABSTRACT:
Capacitor in a semiconductor device suitable for diffusion prevention between a lower electrode and a polysilicon and oxidation prevention of a barrier metal layer and a method for manufacturing the same are disclosed. The capacitor in a semiconductor device includes a semiconductor substrate, an insulating layer having a contact hole on the substrate, a plug formed in the contact hole, a first barrier layer on the plug, a second barrier layer on the first barrier layer, a lower electrode on the second barrier layer, a dielectric layer on the lower electrode, and an upper electrode on the dielectric layer.

REFERENCES:
patent: 5005102 (1991-04-01), Larson
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5566045 (1996-10-01), Summerfelt et al.
patent: 5793600 (1998-08-01), Fukuda et al.

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