Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2005-04-05
2005-04-05
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
Reexamination Certificate
active
06875707
ABSTRACT:
A method of forming a capacitor includes forming first and second capacitor electrodes over a substrate. A capacitor dielectric region is formed intermediate the first and second capacitor electrodes, and includes forming a silicon nitride comprising layer over the first capacitor electrode. A silicon oxide comprising layer is formed over the silicon nitride comprising layer. The silicon oxide comprising layer is exposed to an activated nitrogen species generated from a nitrogen-containing plasma effective to introduce nitrogen into at least an outermost portion of the silicon oxide comprising layer. Silicon nitride is formed therefrom effective to increase a dielectric constant of the dielectric region from what it was prior to said exposing. Capacitors and methods of forming capacitor dielectric layers are also disclosed.
REFERENCES:
patent: 3627598 (1971-12-01), McDonald et al.
patent: 4254161 (1981-03-01), Kemlage
patent: 4262631 (1981-04-01), Kubacki
patent: 4435447 (1984-03-01), Ito et al.
patent: 4605447 (1986-08-01), Brotherton et al.
patent: 4882649 (1989-11-01), Chen et al.
patent: 4891684 (1990-01-01), Nishioka et al.
patent: 4980307 (1990-12-01), Ito et al.
patent: 4996081 (1991-02-01), Ellul et al.
patent: 5026574 (1991-06-01), Economu et al.
patent: 5032545 (1991-07-01), Doan et al.
patent: 5051794 (1991-09-01), Mori
patent: 5142438 (1992-08-01), Reinberg et al.
patent: 5164331 (1992-11-01), Lin et al.
patent: 5227651 (1993-07-01), Kim et al.
patent: 5237188 (1993-08-01), Iwai et al.
patent: 5254489 (1993-10-01), Nakata
patent: 5258333 (1993-11-01), Shappir et al.
patent: 5318924 (1994-06-01), Lin et al.
patent: 5324679 (1994-06-01), Kim et al.
patent: 5330920 (1994-07-01), Soleimani et al.
patent: 5330936 (1994-07-01), Ishitani
patent: 5334554 (1994-08-01), Lin et al.
patent: 5350707 (1994-09-01), Ko et al.
patent: 5376593 (1994-12-01), Sandhu et al.
patent: 5378645 (1995-01-01), Inoue et al.
patent: 5382533 (1995-01-01), Ahmad et al.
patent: 5393702 (1995-02-01), Yang et al.
patent: 5397748 (1995-03-01), Watanabe et al.
patent: 5398641 (1995-03-01), Shih
patent: 5436481 (1995-07-01), Egawa et al.
patent: 5445999 (1995-08-01), Thakur et al.
patent: 5449631 (1995-09-01), Giewont et al.
patent: 5459105 (1995-10-01), Matsuura
patent: 5464792 (1995-11-01), Tseng et al.
patent: 5498890 (1996-03-01), Kim et al.
patent: 5500380 (1996-03-01), Kim
patent: 5504029 (1996-04-01), Murata et al.
patent: 5508542 (1996-04-01), Geiss et al.
patent: 5518946 (1996-05-01), Kuroda
patent: 5518958 (1996-05-01), Giewont et al.
patent: 5523596 (1996-06-01), Ohi et al.
patent: 5596218 (1997-01-01), Soleimani et al.
patent: 5612558 (1997-03-01), Harshfield
patent: 5619057 (1997-04-01), Komatsu
patent: 5620908 (1997-04-01), Inoh et al.
patent: 5633036 (1997-05-01), Seebauer et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5674788 (1997-10-01), Wristers et al.
patent: 5685949 (1997-11-01), Yashima
patent: 5716864 (1998-02-01), Abe
patent: 5719083 (1998-02-01), Komatsu
patent: 5731235 (1998-03-01), Srinivasan et al.
patent: 5760475 (1998-06-01), Cronin
patent: 5763922 (1998-06-01), Chau
patent: 5821142 (1998-10-01), Sung et al.
patent: 5834372 (1998-11-01), Lee
patent: 5837592 (1998-11-01), Chang et al.
patent: 5837598 (1998-11-01), Aronowitz et al.
patent: 5840610 (1998-11-01), Gilmer et al.
patent: 5844771 (1998-12-01), Graettinger et al.
patent: 5851603 (1998-12-01), Tsai et al.
patent: 5861651 (1999-01-01), Brasen et al.
patent: 5885877 (1999-03-01), Gardner et al.
patent: 5939750 (1999-08-01), Early
patent: 5960289 (1999-09-01), Tsui et al.
patent: 5960302 (1999-09-01), Ma et al.
patent: 5970345 (1999-10-01), Hattangady et al.
patent: 5972783 (1999-10-01), Arai et al.
patent: 5972800 (1999-10-01), Hasegawa
patent: 5994749 (1999-11-01), Oda
patent: 5998253 (1999-12-01), Loh et al.
patent: 6001748 (1999-12-01), Tanaka
patent: 6008104 (1999-12-01), Schrems
patent: 6033998 (2000-03-01), Aronowitz et al.
patent: 6054396 (2000-04-01), Doan
patent: 6057220 (2000-05-01), Ajmera et al.
patent: 6080629 (2000-06-01), Gardner et al.
patent: 6080682 (2000-06-01), Ibok
patent: 6087229 (2000-07-01), Aronowitz et al.
patent: 6091109 (2000-07-01), Hasegawa
patent: 6091110 (2000-07-01), Hebert et al.
patent: 6093661 (2000-07-01), Trivedi et al.
patent: 6096597 (2000-08-01), Tsu et al.
patent: 6110780 (2000-08-01), Yu et al.
patent: 6110842 (2000-08-01), Okuno et al.
patent: 6114203 (2000-09-01), Ghidini et al.
patent: 6136636 (2000-10-01), Wu
patent: 6140187 (2000-10-01), DeBusk et al.
patent: 6146948 (2000-11-01), Wu et al.
patent: 6174821 (2001-01-01), Doan
patent: 6184110 (2001-02-01), Ono et al.
patent: 6197701 (2001-03-01), Shue et al.
patent: 6201303 (2001-03-01), Ngo et al.
patent: 6207532 (2001-03-01), Lin et al.
patent: 6207586 (2001-03-01), Ma et al.
patent: 6207985 (2001-03-01), Walker
patent: 6225167 (2001-05-01), Yu et al.
patent: 6228701 (2001-05-01), Dehm et al.
patent: 6232244 (2001-05-01), Ibok
patent: 6255703 (2001-07-01), Hause et al.
patent: 6265327 (2001-07-01), Kobayashi et al.
patent: 6268296 (2001-07-01), Misium et al.
patent: 6274442 (2001-08-01), Gardner et al.
patent: 6297162 (2001-10-01), Jang et al.
patent: 6323114 (2001-11-01), Hattangady et al.
patent: 6331492 (2001-12-01), Misium et al.
patent: 6350707 (2002-02-01), Liu et al.
patent: 6362085 (2002-03-01), Yu et al.
patent: 6399445 (2002-06-01), Hattangady et al.
patent: 6410991 (2002-06-01), Kawai et al.
patent: 6413881 (2002-07-01), Aronowitz et al.
patent: 6436771 (2002-08-01), Jang et al.
patent: 6450116 (2002-09-01), Noble et al.
patent: 6482690 (2002-11-01), Shibata
patent: 6492690 (2002-12-01), Ueno et al.
patent: 20030034518 (2003-02-01), Yoshikawa
patent: 0 886 308 (1998-06-01), None
patent: WO 9639713 (1996-06-01), None
Doyle et al.,Simultaneous Growth of Different Thickness Gate Oxides in Silicon CMOS Processing, IEEE 16 Electron Device Letters, No. 7, pp. 301-302 (Jul. 1995).
Ko et al.,The Effect of Nitrogen Incorporation into the Gate Oxide by Using Shallow Implantation of Nitrogen and Drive-in Process, IEEE, pp. 32-35 (1996).
Kuroi et al.,The Effects of Nitrogen Implantation Into P+ Poly-Silicon Gate on Gate Oxide Properties, IEEE Symposium on VLSI Technology Digest of Technical Papers, pp. 107-108 (1994).
Liu et al.,Multiple Gate Oxide Thickness for 2GHz System-on-a-Chip Technologies, IEEE, pp. 589-592 (1998).
Wolf, Silicon Processing for the VLSI Era, vol. 2: Process Integration, pp. 188, 189, 194, 195, 609-614, (Lattice Press 1990).
Wolf, Silicon Processing for the VLSI Era, vol. 2: Process Integration, pp. 212-213 (Lattice Press 1990).
Wolf, Silicon Processing for the VLSI Era, vol. 3: Submicron MOSFET, pp. 648-649 (Lattice Press 1995).
U.S. Appl. No. 09/633,556, filed Aug. 2000, Sandhu et al.
DeBoer Scott J.
Moore John T.
Lee Calvin
Micro)n Technology, Inc.
Smith Matthew
Wells St. John P.S.
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