Method of forming a capacitor

Details Method of forming a capacitor Method of forming a capacitor

1997-02-28

1999-04-06

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, H01L 218242

Patent

active

058917683

ABSTRACT:
A capacitor construction includes, a) first and second electrically conductive capacitor plates separated by an intervening capacitor dielectric layer, the first capacitor plate comprising first and second container members, the second container member being received inside of the first container member, the first and second container members comprising a respective ring portion and a respective base portion; and b) a pedestal disk positioned elevationally intermediate the first container member base and the second container member base to space and support the second container member relative to the first container member. The structure is preferably produced by using a series of alternating first and second layers of semiconductive material provided over a molding layer within a container contact opening therein. One of the first and second layers has an average conductivity enhancing dopant concentration of greater than about 5.times.10.sup.19 ions/cm.sup.3, with the other of the first and second layers having an average conductivity enhancing dopant concentration from 0 ions/cm.sup.3 to about 5.times.10.sup.19 ions/cm.sup.3. At least one of the first and second layers is selectively etchable relative to the other of the first and second layers to facilitate a container construction and formation of the pedestal disk. Utilization of alternate materials to the doped semiconductive material is also contemplated.

REFERENCES:
patent: 4558509 (1985-12-01), Tiwari
patent: 4568565 (1986-02-01), Gupta et al.
patent: 5005072 (1991-04-01), Gonzalez
patent: 5006481 (1991-04-01), Chan et al.
patent: 5021357 (1991-06-01), Taguch et al.
patent: 5023683 (1991-06-01), Yamada
patent: 5053351 (1991-10-01), Fazan et al.
patent: 5061651 (1991-10-01), Ino
patent: 5071781 (1991-12-01), Seo et al.
patent: 5116776 (1992-05-01), Chan et al.
patent: 5126810 (1992-06-01), Gotou
patent: 5130172 (1992-07-01), Hicks et al.
patent: 5135883 (1992-08-01), Bae et al.
patent: 5139825 (1992-08-01), Gordon et al.
patent: 5164337 (1992-11-01), Ogawa et al.
patent: 5168073 (1992-12-01), Gonzalez et al.
patent: 5170233 (1992-12-01), Liu et al.
patent: 5206787 (1993-04-01), Fujioka
patent: 5214296 (1993-05-01), Nakata et al.
patent: 5216267 (1993-06-01), Jin et al.
patent: 5223729 (1993-06-01), Kudoh et al.
patent: 5247196 (1993-09-01), Kimura
patent: 5262662 (1993-11-01), Gonzalez et al.
patent: 5285092 (1994-02-01), Yoneda
patent: 5290726 (1994-03-01), Kim
patent: 5300321 (1994-04-01), Nakano et al.
patent: 5320878 (1994-06-01), Maya
patent: 5403620 (1995-04-01), Kaesz et al.
patent: 5622882 (1997-04-01), Yee
patent: 5631184 (1997-05-01), Ikemasu et al.
Morihara, Toshinori et al., "Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory", Jpn. J. Appl. Phys., vol. 33 (1994) Pt. 1, No. 8.
Watanabe, Hidehiro, et al., "Stacked Capacitor Cells for High-Density RAMs", IEDM 88, pp. 600-603.
S.H. Woo, et al., "Selective Etching Technology of in-situ P Doped Poly-Si (SEDOP) for High Density DRAM Capacitors", IEEE, 1994, pp. 25-26.
Ema, T., et al., "3-Dimensional Stacked Capacitor Cell For 16M and 64M Drams", IEDM 1988, pp. 592-595.
Temmler, D., "Multilayer Vertical Stacked Capacitors (MVSTC) For 64Mbit and 256Mbig DRAMs", Article, no date, pp. 13-14.
Inoue, S., et al., "A Spread Stacked Capacitor (SSC) Cell For 64Mbit DRAMs", IEEE 1989, pp. 31-34 (2.3.1 -2.3.4).
T.Morihara et al., "Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory", Aug. 19, 1994, Jpn. J. Appl. Phys. vol. 33 (1994), Pt. 1, No. 8, pp. 14-19.
S.Woo et al., "Selective Etching Technology of in-situ P Doped Poly-Si (SEDOP) for High Denisty DRAM Capacitors", 1994 Symposium on VLSI Technology Digest of Technical Papers, pp. 25-26.
H.Watanabe et al., "Stacked Capacitor Cells for High-density dynamic RAMs", IEDM 1988, pp. 600-603.
Conrad, J.R. et al., "Ion Beam Assisted Coating And Surface Modification With Plasma Source Ion Implantation", J. Vac. Sci. Technol. A 8 (4), Jul./Aug., 1990, 3146-3151.
Niemer, Burkhard et al., "Organometallic Chemical Vapor Deposition Of Tungsten Metal, And Suppression Of Carbon Incorporation By Codeposition Of Platinum", University of California, Dept. of Chemistry and Biochemistry, May, 1992.

Affiliated with

Also associated with

Rating

Method of forming a capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1371021