Method of forming a capacitor

Details Method of forming a capacitor Method of forming a capacitor

1999-02-08

2001-05-29

Tsai, Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

06238969

ABSTRACT:

TECHNICAL FIELD
This invention relates generally to capacitor formation in semiconductor wafer processing, and to resultant capacitor constructions.
BACKGROUND OF THE INVENTION
As DRAMs increase in memory cell density, there is a continuing challenge to maintain sufficiently high storage capacitance despite decreasing cell area. Additionally, there is a continuing goal to further decrease cell area.
The principal way of increasing cell capacitance is through cell structure techniques. Such techniques include three-dimensional cell capacitors, such as trenched or stacked capacitors. This invention concerns stacked capacitor cell constructions, including what are commonly known as crown or cylindrical container stacked capacitors.


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