Method of forming a capacitative section of a semiconductor devi

Details Method of forming a capacitative section of a semiconductor devi Method of forming a capacitative section of a semiconductor devi

1998-03-09

2000-08-01

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438251, 438649, 438253, H01L 218242

Patent

active

060966009

ABSTRACT:
The phosphorus concentration of an upper electrode and the phosphorus concentration of a lower electrode can be made equally high without loss of adhesion between the polysilicon and a metallic layer. It includes a step of forming a stacked layer structure consisting of: a lower electrode layer provided on an underlay, a dielectric layer provided on this lower electrode layer, and an upper electrode layer consisting of an impurity-doped layer and a metallic layer successively provided on this dielectric layer, and a step of doping the metallic layer with the same impurity as the impurity in the impurity-doped layer prior to heat treatment of the stacked layer structure.

REFERENCES:
patent: 5618749 (1997-04-01), Takahashi et al.
patent: 5631188 (1997-05-01), Chang et al.

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