Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-15
2005-03-15
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S386000
Reexamination Certificate
active
06867089
ABSTRACT:
A method of forming a bottle-shaped trench for capacitor in a semiconductor substrate. First, the semiconductor substrate is selectively etched to form a trench, wherein the trench has a top portion and a bottom portion. Then, an oxide film is formed on the top portion of the trench. Next, a rugged polysilicon layer is formed on the bottom portion and the top portion of the trench. The rugged polysilicon layer and the semiconductor substrate are etched through the bottom portion of the trench by diluted ammonia solution as the etchant to form a bottle-shaped trench having a rugged surface. Next, the oxide film is removed.
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Chen Yi-Nan
Ho Hsin-Jung
Huang Tung-Wang
Liu Hsien-Wen
Chen Jack
Ladas & Parry LLP
Nanya Technology Corporation
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