Method of forming a boron-doped diamond film by chemical vapor d

Details Method of forming a boron-doped diamond film by chemical vapor d Method of forming a boron-doped diamond film by chemical vapor d

1995-04-03

1997-06-03

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427573, 427575, 427249, 4272551, 4272552, 427122, 427314, B05D 306, C23C 1630

Patent

active

056352581

ABSTRACT:
A method of forming boron-doped diamond film by, chemical vapor deposition (CVD) utilizing two-component system reactant gas doped with trimethyl borate.

REFERENCES:
patent: 4740263 (1988-04-01), Imai et al.
patent: 5353737 (1994-10-01), Koyama et al.
Chen et al, Thin Solid Films, 248 (1994) pp. 149-155.
Chen et al, "Boron-doped diamond films using trimethylborate as a dopant source in methane-carbon dioxide gas mixtures", 4th European Conference on Diamond, Diamond-like and Related Materials (Diamond Films '93) Sep. 20-24,1993 Albufeira, Portugal Diamond and Related Materials, vol. 3 No. 4-6 Apr. 1994, pp. 632-637.
Meilunas et al., "The Physical and Electrical Properties of Boron Doped Diamond Thin Films", Proc. 2nd Int'l. Conf. on Elec. Mats., Materials Research Society, 1990, pp. 609-614.

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