Method of forming a body-tie

Details Method of forming a body-tie Method of forming a body-tie

2006-05-02

2010-06-08

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S221000, C438S427000, C257SE21548

Reexamination Certificate

active

07732287

ABSTRACT:
A method of forming a body-tie. The method includes forming the body-tie during an STI scheme of an SOI process. During the STI scheme, a first trench is formed. The first trench stops before a buried oxide layer of the SOI substrate. The first trench may determine a height of body tie that is shared between at least two FETs. A second trench may also be formed within the first trench. The second trench stops in the SOI substrate. The second trench defines the location and shape of a body-tie. Once the location and shape of the body-tie are defined, an oxide is deposited above the body-tie. The deposited oxide prevents certain implants from entering the body tie. By preventing these implants, a source and a drain implant may be self-aligned to the source and drain areas without requiring the use of the photoresist mask to shield the body tie regions from the source and drain implant.

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