Method of forming a body contact of a transistor and...

Details Method of forming a body contact of a transistor and... Method of forming a body contact of a transistor and...

2005-03-15

2005-03-15

Loke, Steven (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S270000, C438S271000, C438S587000, C438S588000, C438S589000, C257S142000, C257S341000, C257S342000, C257S329000, C257S330000, C257S331000, C257S343000

Reexamination Certificate

active

06867083

ABSTRACT:
A transistor (10, 30, 60) is formed to have a body contact (16, 36, 69) that has a minimal contact to the sides of the source region (14, 34, 63). This increases the density and reduces on-resistance of the transistor (10, 30, 60).

REFERENCES:
patent: 4639754 (1987-01-01), Wheatley et al.
patent: 5034785 (1991-07-01), Blanchard
patent: 5866931 (1999-02-01), Buluca et al.
patent: 6204533 (2001-03-01), Williams et al.
patent: 6541818 (2003-04-01), Pfirsch et al.
patent: 6566710 (2003-05-01), Strachan et al.

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