Method of forming a barrier layer of a semiconductor device

Details Method of forming a barrier layer of a semiconductor device Method of forming a barrier layer of a semiconductor device

2007-01-22

2008-11-18

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21226, C257SE21577

Reexamination Certificate

active

07452810

ABSTRACT:
A method of cleaning a surface of a silicon wafer includes subjecting the surface of the silicon wafer to a hydrogen (H2) gas plasma containing at least one inert gas while biasing the hydrogen plasma with a RF bias power to direct the hydrogen (H2) plasma to clean the surface of the silicon wafer.

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