Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1994-05-31
1997-05-27
Fourson, George
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438655, 438612, H01L 2144
Patent
active
056331967
ABSTRACT:
A method is provided for forming an improved landing pad with barrier of a semiconductor integrated circuit, and an integrated circuit formed according to the same. An opening is formed through a first dielectric layer to expose a portion of a diffused region. A landing pad is formed over the first dielectric layer and in the opening. The landing pad preferably comprises a silicide layer disposed over a barrier layer which is disposed over a polysilicon layer. The landing pad will provide for smaller geometries and meet stringent design rules such as that for contact space to gate. The barrier layer, formed as part of the landing pad, will provide for a uniform and high integrity barrier layer between the diffused region and an overlying aluminum contact to prevent junction spiking. A second dielectric having an opening therethrough is formed over the landing pad. A conductive contact, such as aluminum, is formed in the contact opening. The conductive contact will connect with the diffused region through the landing pad. Misalignment of the conductive contact opening may be tolerated without invading design rules.
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Everhart C.
Fourson George
Galanthay Theodore E.
Jorgenson Lisa K.
SGS-Thomson Microelectronics Inc.
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