Method of filling a contact hole in a semiconductor substrate wi

Details Method of filling a contact hole in a semiconductor substrate wi Method of filling a contact hole in a semiconductor substrate wi

1996-08-15

1998-09-29

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438667, 438660, 438643, 438646, 438688, H01L 214763

Patent

active

058145567

ABSTRACT:
A method for forming a metal layer of an ultra-thin film according to metal deposition conditions and a method for forming metal wiring by filling a high aspect-ratio contact hole using cooling step prior to depositing the metal layer. In particular, the additional cooling process is performed before the process of depositing the metal layer and then the deposition process is performed in a state where the temperature of the wafer has been cooled down to a temperature in the range between -25.degree. C. and room temperature. The surface morphology of the deposited metal layer is improved and a continuous ultra-thin film can be obtained. Also, the aluminum filling characteristics in the contact hole having a high aspect-ratio are improved.

REFERENCES:
patent: 4788082 (1988-11-01), Schmitt
patent: 4888087 (1989-12-01), Moslehi et al.
patent: 4897709 (1990-01-01), Yokoyama et al.
patent: 4970176 (1990-11-01), Tracy et al.
patent: 5260169 (1993-11-01), Nakano
patent: 5545573 (1996-08-01), Narazaki et al.
patent: 5591486 (1997-01-01), Okano et al.
patent: 5599744 (1997-02-01), Koh et al.
patent: 5643832 (1997-07-01), Kim
patent: 5665630 (1997-09-01), Ishizuka et al.

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