Method of fabrication of thin film resistor with zero TCR

Details Method of fabrication of thin film resistor with zero TCR Method of fabrication of thin film resistor with zero TCR

2005-05-10

2005-05-10

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S379000, C257S532000, C257S533000, C257S536000, C257S537000

Reexamination Certificate

active

06890810

ABSTRACT:
A thin film resistor that has a substantially zero TCR is provided as well as a method for fabricating the same. The thin film resistor includes at least two resistor materials located over one another. Each resistor material has a different temperature coefficient of resistivity such that the effective temperature coefficient of resistivity of the thin film resistor is substantially 0 ppm/° C. The thin film resistor may be integrated into a interconnect structure or it may be integrated with a metal-insulator-metal capacitor (MIMCAP).

REFERENCES:
patent: 4464646 (1984-08-01), Zabler et al.
patent: 5448103 (1995-09-01), de Wit
patent: 5643834 (1997-07-01), Harada et al.
patent: 6097276 (2000-08-01), Van Den Broek et al.
patent: 6272736 (2001-08-01), Lee
patent: 6603172 (2003-08-01), Segawa et al.

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