Method of fabrication of semiconductor device

Details Method of fabrication of semiconductor device Method of fabrication of semiconductor device

2007-01-02

2007-01-02

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S449000, C438S473000, C257SE33041

Reexamination Certificate

active

11052861

ABSTRACT:
A manufacturing method of a semiconductor device, the method including implanting impurity ions into a silicon layer and irradiating a pulsed light having a pulse width of 100 milliseconds or less and a rise time of 0.3 milliseconds or more onto the silicon layer thereby activating the impurity ions. The rise time is defined as a time interval of a leading edge between an instant at which the pulsed light starts to rise and an instant at which the pulsed light reaches a peak energy.

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