Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2005-08-23
2005-08-23
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S779000, C438S952000
Reexamination Certificate
active
06933244
ABSTRACT:
A method passivates a surface of a semiconductor structure. The method provides III-V semiconductor material having a surface to be passivated. Upon the surface of the III-V semiconductor material to be passivated an oxide layer is formed. Thereafter, the surface of the III-V semiconductor material having the oxide layer is passivated, without desorption of the oxide layer and in a vacuum of 2×10−6Torr, with a material having the ability to intermix with the oxide layer so as to exchange oxygen, passivation layer material, and III-V semiconductor material therebetween to form graded layers of oxidized III-V and passivation material.
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Gauthier & Connors LLP
Ghyka Alexander
Massachusetts Institute of Technology
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