Method of fabricating zinc oxide film having matching...

Details Method of fabricating zinc oxide film having matching... Method of fabricating zinc oxide film having matching...

2011-06-14

2011-06-14

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S758000, C438S104000, C438S044000, C257SE21090, C257SE21097

Reexamination Certificate

active

07960292

ABSTRACT:
A zinc oxide (ZnO) film is fabricated. Metal-organic chemical vapor deposition (MOCVD) is used to obtain the film with few defects, high integrity and low cost through an easy procedure. The ZnO film above a silicon substrate has a matching crystal orientation to the substrate. Thus, the ZnO film is fit for ultraviolet light-emitting diodes (UV LED), solar cells and related laser devices.

REFERENCES:
patent: 7601558 (2009-10-01), Li et al.
patent: 2009/0062128 (2009-03-01), Harada et al.
patent: 2009/0224240 (2009-09-01), Shinagawa et al.

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