Method of fabricating vertical channel semiconductor device

Details Method of fabricating vertical channel semiconductor device Method of fabricating vertical channel semiconductor device

2011-03-22

2011-03-22

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21629

Reexamination Certificate

active

07910437

ABSTRACT:
A method for fabricating a semiconductor device may include: forming an outer trench, including: a first trench, and a second trench formed under the first trench, the second trench being formed by etching a substrate, forming a dielectric layer, which fills the second trench, by performing a thermal oxidation process, such that a width of the second trench is less than a width of the first trench, forming a gate dielectric layer along a surface of a semiconductor structure including the dielectric layer, and forming a gate electrode, which fills a remaining portion of the outer trench, over the gate dielectric layer.

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