Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-08
2007-05-08
Zarneke, David A. (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S614000, C257SE21509
Reexamination Certificate
active
10973528
ABSTRACT:
Provided is a method of fabricating an ultra thin flip-chip package. In the above method, an under barrier metal film is formed on a bond pad of a semiconductor chip. Three-dimensional structured solder bumps are formed on the under barrier metal film, each of the solder bumps including a bar portion and a ball portion disposed at an end of the bar portion. The semiconductor chip including the three-dimensional structured solder bumps is bonded to a solder layer on a printed circuit board to complete a flip-chip package. According to the present invention, by employing the three-dimensional structured solder bumps, it is possible to lower the height of the solder bumps, thereby improving the reliability of an ultra thin flip-chip package.
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English language abstract of Korean Publication No. P2002-79136.
English language abstract of Korean Publication No. 1996-039234.
Jeong Se-Young
Kim Nam-Seog
Kim Soon-Bum
Oh Se-Yong
Marger & Johnson & McCollom, P.C.
Zarneke David A.
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